In addition, the shortcircuit withstand times of different devices are also quite different, so for igbt protection circuits, it is generally recommended to have additional margins built with more than the rated shortcircuit withstand time. The short circuit withstand time is shorter than igbt. Integrated galvanic isolation and low onresistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and railtorail gate voltage control. For the purpose of this highspeed protection, isahaya electronics igbt drivers with some exceptions contain short circuit protection circuits. Application of igbt drive and protection circuit, library. It is usually desirable to include short circuit protection in the gate drive circuit to provide the fast response required for protection against severe low impedance short circuits. The driver must detect the overcurrent or the shortcircuit to cutoff the current. The requirements of short circuit protection for sic mosfets will be summarized. Igbt driver skyper32r igbt driver manufacturer from new. The driver integrated circuit alone is not sufficient to completely protect the igbt, and an auxiliary protection circuit must be added to cut off the input drive signal. Overcurrent and shortcircuit protection for igbts used. Influence of short circuit conditions on igbt short.
The protection of the igbts in the case of an overcurrent or a shortcircuit, respects the general methodology of a power electronic device protection. Igbt gate driver reference design for parallel igbts with short. Manufactured by semikron the skyper 32 r range is rated at 1700 vce and designed for use as a driver for igbt modules in bridge circuits in general industrial applications. If it is higher the igbt driver shuts down its output to protect the power transistor. For details on fuse selection, refer to the littelfuse fuse selection guide. This means certain carbide mosfet needs more stringent short circuit protection. Influence of short circuit conditions on igbt short circuit current in. In figure 1, the orange block highlights the ac line fuses for overcurrent or short circuit protection.
This protection circuit compares the igbts collectoremitter voltage v ce with a reference voltage. This requires the input circuit to be blocked by the external circuit to prevent the igbt from continuously passing large current pulses. Connection between gate driver and igbt module the gate driver must be located very close to the igbt module to minimize stray inductance between the gate driver and igbt module. Cn202888814u igbt short circuit protection soft turnoff. Its is a semiconductor device used for switching related applications. They include gerber files, billofmaterials and documentation. A fast overcurrent protection scheme for igbt modules. The vqa series is a dcdc converter designed specifically to drive high power igbt modules. Gate driver configuration and short circuit protection for. Usually, every power device is protected by its driver, which becomes a multifunctional circuit capable of assuring the driving signal, monitoring the operation state as well as providing its protection.
The utility model discloses an igbt short circuit protection soft turnoff circuit which includes a triode q1, a triode q3, a triode q4, a diode d2, a pnp triode q2, a driving resistor r4, a driving resistor r6, a driving resistor r7, a resistor r2, a currentlimiting resistor r3, and a currentlimiting resistor r5. The most popular overcurrent short circuit protection method for igbt and mosget is desat. Click on an image below to see more details and get the reference design. Meanwhile, the modules feature output shortcircuit protection, which can be widely used in frequency package type.
Guidelines toward a rugged design for shortcircuit protection scp are presented with an emphasis on improving the reliability and availability of the overall system. Using a didt control technique, the gate drive circuit enabled the mitsubishi module cm600hb90h to switch 4000a at speeds up to 10kas in normal operation, while holding the short circuit peakcurrent to about 8000a. The sid1183k is a single channel igbt and mosfet driver in an esop package. Igbt overcurrent and shortcircuit protection in industrial motor. An advantageous solution, even for highpower igbt modules, is to mount the gate driver onto the igbt module directly. Higher gain leads to higher shortcircuit current levels within the igbt, so clearly lower gain igbts will have lower shortcircuit levels. Features include two output channels, dynamic short circuit protection and failure management.
This isolated gate driver circuit is designed for low voltages and medium power drives, operating from a. Mornsun power modules for igbt drivers adopt the mode of mutual connection after two independent outputs makes it better to power up igbt drivers turnon and turnoff. The ncv5702dr2g is a highcurrent igbt driver designed to drive a high and lowside pair of igbts in a motor drive application. Introduction in high power igbt module applications it is usually desirable to use completely isolated gate drive circuits. For gate drive requirements that exceed the standalone capability of the.
Essential for the design of the driver is to limit the voltage at the igbt and handling of short circuits. The saturation circuit detects vds of mosfet, or vce igbt. As an example, the gate driver shown in figure 4 performs the current limiting and short circuit protection function by. Examples using transformers in practical driver circuits 4.
Ixys igbt driver module enables high power systems design. Shortcircuit protection circuits for siliconcarbide. An igbt gate driver circuit includes means for detecting when the collectortoemitter voltage vce of a turnedon igbt, intended to be operated in the saturation region, increases above a preset level, indicative of a fault condition, such as a short circuit. Bldc motor control with integrated igbt drivers digikey. The igbts1 short circuit withstand capability defined as the start of the is shortcircuit current until the module is destroyed. Application note an990 igbt characteristics table of contents. Tis ucc217xx family, a single channel isolated gate driver for igbt and sic with advanced protection feature, can be used in various system designs to. Manufacturer of igbt driver skyper32r igbt driver, dual a316j igbt driver, a316j igbt driver 4 channel and a316j igbt driver 6 channel offered by v. The up to 8 a peak output drive current enables the product to drive devices up to 600 a without requiring any additional active components. Protecting the igbts against short circuit conditions is a. Gate drive circuit an overview sciencedirect topics. An overcurrent condition could be caused by either a short circuit or an overload fault, and the current level of both can be different depending on the impedance of.
An optimized et igbt spice model based on the kraus model was developed and experimentally verified on a fieldstop trenchgate 30 a600 v commercial igbt device. In response to such an increase in the vce of a turned on igbt, the igbt is turnedoff in two steps. The short circuit current is not detected by the current sensor. The fault protection methods used in igbt converters are different from their gate turnoff thyristor gto counterparts. The desaturation of the igbt is detected by the dynamic short circuit protection of the driver. It is necessary to stop the overcurrent within the short circuit capability time. This accentuates the importance of the gate driver circuit and its overcurrent detection and protection features. Understanding the short circuit protection for silicon. A desaturation fault detection circuit provides protection for power semiconductor switches igbt or mosfets against shortcircuit current events which may lead to destruction of these power switches. Hybrid circuits optimize gate drive and protect high power. Comparative design of gate drivers with shortcircuit. Smart gate driver coupler tlp5214 application note toshiba. To drive igbt modules for inverter, ac servo systems, ups, cvcf inverter, and welding applications.
Among the various shortcircuit protection schemes, desaturation protection is the most mature and widely used solution. When the short circuit is detected the control circuit turns on all the gto switches in the converter, which results in the. Gda2a4s1 is a 4 channel igbt gate driver board with configurable dead time and short circuit protection. Dc bus current sensing inverter shootthrough fault. Application note an 7002 connection of gate drivers to. The same driver ics can be used for short circuit protection of sic mosfets if the driver ic can respond quickly enough. The application to the shortcircuit protection circuit design for a hard switched fault in an inverter.
Igbt overcurrent protection igbt protection from overcurrent conditions is a critical part of system. The overcurrent protection of igbt is limiting the shortcircuit current and its iv track to the short circuit safe working area when the device overflows, and the igbt is turned off before the device is damaged to avoid the damage of the switch tube. Now lets take a look at the different overcurrent and short circuit protection methods. Modulator project, an igbt gate driver 2 was developed to drive the eupec igbt module fz800r33, rated at 3. Pdf fast overcurrent protection of high power igbt modules. Igbt high power modules are protected against overcurrent and shortcircuit. Reference designs are available for the products shown on this page. Mc33153 single igbt gate driver the mc33153 is specifically designed as an igbt driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Igbt is a short form of insulated gate bipolar transistor, combination of bipolar junction transistor bjt and metal oxide field effect transistor mosfet. Igbt overcurrent and shortcircuit protection are implemented using a range of methods in the experimental hardware. If the short circuit occurs close to the module, the current may rise at several kas. Evaluating 1200 v sic mosfets robustness under short. Power integrations gate driver reference designs speed timetomarket by providing you with detailed, functional, tested examples of gate driver implementations.
Igbt overcurrent and shortcircuit protection in industrial motor drives. Igbt gate driver reference design for parallel igbts with shortcircuit protection and external bjt buffer 2 system design theory 2. The gate driver consists of a standard gate drive from concept technology ltd. Ic is shown for different values of the gate capacitor c1. Due to the lack of gate driver integrated circuit ic with desaturation protection for the silicon carbide sic metaloxidesemiconductor fieldeffect transistor mosfet, the conventional. The overcurrent protection of igbt modules is of concern in many industrial applications where igbt modules are widely used. The gd3100 is an advanced singlechannel gate driver for igbtssic. Igbt driver boards by semikron power products international. Ixidm1401 supports dualchannel medium power igbt module up to 3000v, switching up to 250 khz, shortcircuit protection, advanced active clamping, and supplyvoltage monitoring. Vces 600v series up to 400a class vces 1200v series up to 200a class vces 1400v series up to 200a class detect circuit timer and. Us6275093b1 igbt gate drive circuit with short circuit. Chapter 5 protection circuit design 52 1 short circuit overcurrent protection 11 short circuit withstand capability in the event of a short circuit, first the igbts collect or. With dual isolated outputs, a wide temperature range, and the ability to operate under no load conditions, these dcdc converters are ideally suited to provide a fully isolated gate drive for wind turbine and solar panel applications. Igbt transistor basics, characteristics, switching.
Examples of use of optocouplers in practical driver circuits 3. A newly developed circuit that provides short circuit protection without desaturation detection will also be presented. Ixys objective is to serve the market with igbt driver parts that enable a short design circle as well as the lowest design cost possible. Galvanic isolation is provided by power integrations innovative solid insulator fluxlink technology.
Igbt modules are designed to survive low impedance short circuits for a minimum of 10sec. Igbt gate driver reference design for parallel igbts with. Shortcircuit faults are the most critical failure mechanism in power converters. Depending on the devices characteristics, during the shortcircuit, the collector.
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